Coulomb correlation and tunneling effects in single and double V-groove quantum wire LEDs

Summary form only given. We have investigated the electroluminescence (EL) in /spl ap/10/spl times/20 nm/sup 2/ sized GaAs/AlGaAs V-groove quantum wire (QWR) diodes containing self-ordered vertical quantum wells (VQWs). We present the most recent results, which include diodes with double QWRs (d-QWRs) and high-magnetic field studies (<27 T). The QWRs were grown by OMCVD on V-grooved GaAs substrates. The grown structures, consisting of an intrinsic region with the crescent shaped QWRs and undoped AlGaAs barrier layers sandwiched between p- and n-AlGaAs regions, were processed into p-i-n mesa diodes. A grown sample containing an asymmetric GaAs d-QWR, the side wall QWs, and the self-ordered VQWs, is shown in the transmission electron micrograph.