DocumentCode
1741823
Title
Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser-application to high sensitivity intracavity absorption spectroscopy
Author
Garnache, A. ; Kachanov, A.A. ; Stoeckel, F. ; Planel, R. ; Thierry-Mieg, V. ; Houdre, R.
Author_Institution
Lab. de Spectrometrie Phys., Saint Martin d´Heres, France
fYear
2000
fDate
12-12 May 2000
Firstpage
82
Lastpage
83
Abstract
Summary form only given. Absorption spectroscopy is widely used in the laboratory and for in situ measurements. One of the most important issues of any monitoring technique, as important as the sensitivity, is the ability to provide absolute absorption coefficients without the need for complicated and cumbersome calibration procedures. Intracavity-laser-absorption-spectroscopy (ICLAS) is one of the most sensitive techniques capable of providing this absolute information. In the ICLAS technique an absorbing medium with absorption lines narrower than the broadband spectrum of a laser is placed inside the laser cavity. The absorption lines follow the Lambert-Beer law, with an equivalent path length of L/sub eq/=ctg, where the generation time t/sub g/ is the time from the beginning of the laser generation to the moment of observation, and c is the velocity of light. Any type of laser with a homogeneously broadened gain medium can be used. ICLAS allows extreme sensitivity, but, up to now, it has been limited mainly to the 0.6. 1 /spl mu/m range, with expensive and bulky systems.
Keywords
absorption coefficients; infrared spectroscopy; measurement by laser beam; semiconductor lasers; sensitivity; surface emitting lasers; ICLAS; Lambert-Beer law; absolute absorption coefficients; absorbing medium; absorption lines; diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser; equivalent path length; extreme sensitivity; high sensitivity intracavity absorption spectroscopy; homogeneously broadened gain medium; laser cavity; laser generation; monitoring technique; Equations; Fluctuations; Laser theory; Microchip lasers; Photonic band gap; Polarization; Semiconductor diodes; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location
San Francisco, CA, USA
ISSN
1094-5695
Print_ISBN
1-55752-608-7
Type
conf
Filename
901670
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