DocumentCode
1741854
Title
Transfer of coherence properties between exciton and continuum transitions in semiconductor quantum wells
Author
Arlt, S. ; Kunde, J. ; Morier-Genoud, Francois ; Keller, Ulrich ; Siegner, Uwe
Author_Institution
Inst. of Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fYear
2000
fDate
12-12 May 2000
Firstpage
101
Lastpage
102
Abstract
Summary form only given. Coherent dynamics in semiconductors can be strongly affected by interaction between energetically degenerate interband transitions. In this paper, we demonstrate for the first time to our knowledge that this strong interaction can be used to transfer the coherence properties of discrete excitons to continuum transitions and vice versa. This transfer can generate coherent radiation from the continuum, which is absent otherwise. Our results can be understood in a model that describes the strongly interacting exciton and continuum transitions as a multitude of excited states coupled to a common ground state. The transfer of coherence properties should be observable in any multilevel system with a common ground state.
Keywords
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; high-speed optical techniques; light coherence; multiwave mixing; semiconductor quantum wells; GaAs-AlGaAs; coherence properties; coherent dynamics; common ground state; continuum transitions; discrete excitons; energetically degenerate interband transitions; excited states; exciton transitions; multilevel system; semiconductor quantum wells; strong interaction; Excitons;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location
San Francisco, CA, USA
ISSN
1094-5695
Print_ISBN
1-55752-608-7
Type
conf
Filename
901707
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