Title :
A frequency reference based in VCSEL-driven dark line resonances in Cs vapor
Author :
Kitching, J. ; Vukicevic, N. ; Weidermann, W. ; Zibrov, A.S. ; Hollberg, L. ; Knappe, S. ; Affolderbach, C. ; Wynands, R.
Author_Institution :
Time & Frequency Div., Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Abstract :
Summary form only given. We report on recent experiments to use dark line coherent population trapping (CPT) resonances in cesium vapor as the basis for a compact frequency reference. The resonance is excited by directly modulating the injection current of a VCSEL at one-half the ground state hyperfine transition of Cs (4.6 GHz) to produce RF sidebands on the optical carrier. The laser output is then passed through a room-temperature cell containing Cs at its vapor pressure together with 8.7 kPa of Neon buffer gas and the transmitted optical power is detected in a photodiode. When the laser carrier is tuned half way between the two hyperfine components of the D/sub 2/ line at 852 nm, and the RF modulation frequency is adjusted to be equal to one-half the hyperfine splitting, the absorption of the sidebands through the cell is slightly reduced due to the CPT effect. As the RF frequency is scanned over the resonance, lock-in detection is used to produce a /spl sim/1 kHz wide dispersive error signal which is in turn used to stabilize the modulation frequency. The narrow signal is the result of the buffer gas, which reduces the time-of-flight broadening of the transition.
Keywords :
atom-photon collisions; caesium; frequency standards; ground states; hyperfine structure; radiation pressure; resonant states; spectral line breadth; 1 kHz; 4.6 GHz; 8.7 kPa; 852 nm; Cs; Cs vapor; Cs-Ne; D/sub 2/ line; Ne; Ne buffer gas; RF frequency; RF modulation frequency; RF sidebands; VCSEL; VCSEL-driven dark line resonances; absorption; buffer gas; compact frequency reference; dark line coherent population trapping resonances; dispersive error signal; frequency reference; ground state hyperfine transition; hyperfine components; hyperfine splitting; injection current; laser carrier; laser output; lock-in detection; modulation frequency; optical carrier; photodiode; room-temperature cell; sidebands; time-of-flight broadening; transition; transmitted optical power; vapor pressure; Frequency modulation; Gas lasers; Laser excitation; Laser transitions; Laser tuning; Optical buffering; Optical modulation; Radio frequency; Resonance; Vertical cavity surface emitting lasers;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-608-7