Modeling GaAs/GaAlAs low-threshold photonic bandgap optical logic gates

Summary form only given. We propose a method to considerably lower the threshold of optical switching in photonic bandgap (PBG) structures by using PBG structures where the refractive index is changed due to the light-induced generation of nonequilibrium charge carriers near the absorption edge of a semiconductor material. As a model of a PBG switch, we considered a 50-period GaAs/GaAlAs multilayer structure. The results of our calculations demonstrate that the bandgap edge can be shifted with reasonably low power densities of controlling light. In particular, a 94% change in the transmission can be achieved with a power density of 0.8723 /spl mu/m radiation equal to 4.8 kW/cm/sup 2/, opening the way of creating low-threshold photonic-crystal optical logic gates.