Ultrafast x ray diffraction

Author

Cavalleri, A. ; Siders, C.W. ; Toth, C. ; Squier, J.A. ; Barty, C.P.J. ; Wilson, K.R. ; Sokolowski-Tinten, K. ; von der Linde, D. ; Kammler, M. ; Horn von Hoegen, M.

Author_Institution

Dept. of Chem. & Biochem., California Univ., San Diego, La Jolla, CA, USA

fYear

2000

fDate

12-12 May 2000

Firstpage

188

Abstract

Summary form only given. Many fundamental processes in physics, such as heat transport and phase transitions in solids involve movement of the constituent atoms. Such changes cannot be directly measured with visible light and occur transiently on time-scales comparable with the natural oscillation periods of atoms (femtoseconds to picoseconds). In this paper, we present experiments on crystalline semiconductors irradiated with short visible pulses in two fluence regimes.

Keywords

III-V semiconductors; X-ray diffraction; high-speed optical techniques; laser beam effects; optical films; Ge; constituent atom; crystalline semiconductors; fluence regimes; fundamental processes; heat transport; natural oscillation period; phase transitions; physics; short visible pulses; solids; time-scales; ultrafast x ray diffraction; Conductors; Optical films; Optical pulses; Optical pumping; Optical sensors; Plasma measurements; Pulse measurements; Solids; Ultrafast optics; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest

Conference_Location

San Francisco, CA, USA

ISSN

1094-5695

Print_ISBN

1-55752-608-7

Type

conf

Filename

901962