Title :
Ultrafast x ray diffraction
Author :
Cavalleri, A. ; Siders, C.W. ; Toth, C. ; Squier, J.A. ; Barty, C.P.J. ; Wilson, K.R. ; Sokolowski-Tinten, K. ; von der Linde, D. ; Kammler, M. ; Horn von Hoegen, M.
Author_Institution :
Dept. of Chem. & Biochem., California Univ., San Diego, La Jolla, CA, USA
Abstract :
Summary form only given. Many fundamental processes in physics, such as heat transport and phase transitions in solids involve movement of the constituent atoms. Such changes cannot be directly measured with visible light and occur transiently on time-scales comparable with the natural oscillation periods of atoms (femtoseconds to picoseconds). In this paper, we present experiments on crystalline semiconductors irradiated with short visible pulses in two fluence regimes.
Keywords :
III-V semiconductors; X-ray diffraction; high-speed optical techniques; laser beam effects; optical films; Ge; constituent atom; crystalline semiconductors; fluence regimes; fundamental processes; heat transport; natural oscillation period; phase transitions; physics; short visible pulses; solids; time-scales; ultrafast x ray diffraction; Conductors; Optical films; Optical pulses; Optical pumping; Optical sensors; Plasma measurements; Pulse measurements; Solids; Ultrafast optics; X-ray diffraction;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-608-7
