DocumentCode
1741990
Title
In-well diffusion in InGaAsP multiple quantum wells
Author
Marshall, D. ; Ebrahimzadeh, M. ; Miller, A. ; Button, C.
Author_Institution
Sch. of Phys. & Astron., St. Andrews Univ., UK
fYear
2000
fDate
12-12 May 2000
Firstpage
193
Abstract
Summary form only given. We present transient amplitude and spin grating measurements in room temperature InGaAsP multiple quantum wells (MQWs) for the first time using picosecond laser pulses at 1.525 microns. We deduce in-well diffusion coefficients and compare these with those previously reported for GaAs.
Keywords
III-V semiconductors; diffraction gratings; diffusion; gallium arsenide; gallium compounds; indium compounds; multiwave mixing; semiconductor quantum wells; 1.525 mum; GaAs; InGaAsP; InGaAsP multiple quantum wells; in-well diffusion; in-well diffusion coefficients; picosecond laser pulses; room temperature; spin grating measurements; transient amplitude; Gallium arsenide; Gratings; Optical pulses; Pulse measurements; Quantum well devices; Quantum well lasers; Temperature measurement; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location
San Francisco, CA, USA
ISSN
1094-5695
Print_ISBN
1-55752-608-7
Type
conf
Filename
901970
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