DocumentCode :
1742059
Title :
Ultrafast resonant Rayleigh scattering from semiconductor microcavities: signatures of disorder in the normal mode coupling regime
Author :
Shchegrov, A.V. ; Bloch, J. ; Birkedal, D. ; Shah, J.
Author_Institution :
Theory Center for Optical Sci. & Eng., Rochester Univ., NY, USA
fYear :
2000
fDate :
12-12 May 2000
Firstpage :
237
Abstract :
Summary form only given. Novel experimental techniques have provided a unique opportunity to study the effects of disorder in semiconductor nanostructures through isolating the component of resonant secondary emission that exists solely due to disorder-resonant Rayleigh scattering (RRS). While for quantum wells (QW) these opportunities have already led to new physical insight, the first experiments on RRS from microcavities (MC) with embedded QW still await theoretical developments. So far no theory has been able to provide detailed understanding of the complicated process of RRS from MC in the normal-mode coupling regime. We present a resolution of this problem by developing a novel microscopic theory that gives a qualitative and quantitative description of the spectral, temporal, and angular properties of MC RRS. A physical picture provided by this theory is thoroughly tested and verified by our ultrafast interferometric experiments.
Keywords :
Rayleigh scattering; coupled mode analysis; excitons; high-speed optical techniques; light interferometry; micro-optics; optical resonators; semiconductor quantum wells; stimulated scattering; angular properties; disorder signatures; many-body techniques; microscopic theory; normal mode coupling regime; quantum well exciton; semiconductor microcavities; spectral properties; temporal properties; two-particle photon propagator; ultrafast interferometric observations; ultrafast resonant Rayleigh scattering; Microcavities; Rayleigh scattering; Resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
ISSN :
1094-5695
Print_ISBN :
1-55752-608-7
Type :
conf
Filename :
902045
Link To Document :
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