DocumentCode
1742086
Title
Generation of coherent LO phonons in GaAs/AlGaAs MQW by the impulsive stimulated Raman scattering
Author
Yee, K.J. ; Yee, D.S. ; Jho, Y.D. ; Kim, D.S. ; Lim, Y.S.
Author_Institution
Seoul Nat. Univ., South Korea
fYear
2000
fDate
12-12 May 2000
Firstpage
257
Abstract
Summary form only given. We show that the generation mechanism of coherent phonons in a quasi two dimensional GaAs/AlGaAs multiple quantum well structure is mainly the impulsive stimulated Raman scattering (ISRS). This is in sharp contrast with bulk GaAs, where ISRS plays only a minor role, if any. In addition, interference between the allowed and the forbidden Raman scattering plays an important role.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; interface phonons; polaritons; semiconductor quantum wells; stimulated Raman scattering; GaAs-AlGaAs; allowed Raman scattering; coherent LO phonons generation; forbidden Raman scattering; impulsive stimulated Raman scattering; quasi-2D MQW; reflective electro-optic sampling; Gallium arsenide; Phonons; Quantum well devices; Raman scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location
San Francisco, CA, USA
ISSN
1094-5695
Print_ISBN
1-55752-608-7
Type
conf
Filename
902072
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