Title :
Generation of coherent LO phonons in GaAs/AlGaAs MQW by the impulsive stimulated Raman scattering
Author :
Yee, K.J. ; Yee, D.S. ; Jho, Y.D. ; Kim, D.S. ; Lim, Y.S.
Author_Institution :
Seoul Nat. Univ., South Korea
Abstract :
Summary form only given. We show that the generation mechanism of coherent phonons in a quasi two dimensional GaAs/AlGaAs multiple quantum well structure is mainly the impulsive stimulated Raman scattering (ISRS). This is in sharp contrast with bulk GaAs, where ISRS plays only a minor role, if any. In addition, interference between the allowed and the forbidden Raman scattering plays an important role.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; interface phonons; polaritons; semiconductor quantum wells; stimulated Raman scattering; GaAs-AlGaAs; allowed Raman scattering; coherent LO phonons generation; forbidden Raman scattering; impulsive stimulated Raman scattering; quasi-2D MQW; reflective electro-optic sampling; Gallium arsenide; Phonons; Quantum well devices; Raman scattering;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-608-7
