Exciton-exciton and exciton-phonon scattering strengths in GaAs/AlAs quantum wires and wells

Summary form only given. Devices using quantum wires (QWR) are of much current interest. In recent times, several investigations have focussed attention on optical properties of QWRs at high excitation densities. In comparison, studies of excitonic interactions in QWRs are few. We perform femtosecond degenerate four wave mixing (DFWM) and picosecond photoluminescence measurements at 8 K on GaAs/AlAs QWRs and QWs. Our results show that while exciton-exciton scattering is reduced in the QWRs, exciton-phonon scattering is enhanced. The QWRs are MBE grown on a vicinal GaAs substrate in the form of a low disorder AlGaAs lateral superlattice with a period of 32 nm and a vertical width of 10 nm.