Photon antibunching from a single semiconductor quantum dot at room temperature

Summary form only given. We report the first experimental observation of photon antibunchirig from i i single CdSe/ZnS quantum dot (QU), at room temperature. This result proves that a CclSc/ZnS QD bchaves as a two-level system even at room temperature. The samples were prepared by spin-casting one drop of a N 0.5 nM solution of CdSe/ZnS QDs dissolved in hexanes oiito a glass coverslip. The QDs arc excited by the 488 nm line of a cw-Ar+ laser, generating the electron-hole pairs in the excit,etl states.