• DocumentCode
    174231
  • Title

    Study the surface structure evolution of Si-adsorption on Ag(111) by LEED-AES

  • Author

    Rahman, Md Saifur ; Nakagawa, T. ; Mizuno, Seiya

  • Author_Institution
    Dept. of Mol. & Mater. Sci., Kyushu Univ., Kasuga, Japan
  • fYear
    2014
  • fDate
    23-24 May 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Silicene, the silicon analogy of graphene, has attracted tremendous attention. Also the formation of alloys that exist only in a confined region near the surface of materials has important technological implications. In this work, we study the structural transition for silicon adsorption on Ag(111) to form a highly ordered 2-D structure and to observe the alloy formation of Si-Ag as an example of semiconductor-metal system. We obtained a mixer phase of (4×4) and (3.5×3.5) R 26° at 470 K and 490 K; a mixer free pure (4×4) structure at 520 K, which is silicene, a highly ordered 2-D honeycomb structure of silicon; and a mixer free (3.5×3.5) R 26° structure at 620 K, which indicated the alloy formation of Si-Ag with two-third monolayer silicon coverage on Ag(111).
  • Keywords
    Auger electron spectra; adsorption; elemental semiconductors; honeycomb structures; low energy electron diffraction; silicon; silver; solid-state phase transformations; surface structure; Ag; LEED-AES; Si; Si-adsorption; mixer free (3.5×3.5) R 26° structure; mixer free pure (4×4) structure; mixer phase; monolayer silicon; ordered 2D honeycomb structure; semiconductor-metal system; structural transition; surface structure; temperature 470 K; temperature 490 K; temperature 520 K; temperature 620 K; Adsorption; Atomic layer deposition; Metals; Mixers; Silicon; Substrates; Temperature measurement; AES; Ag(111); LEED; Silicene; adsorption; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Informatics, Electronics & Vision (ICIEV), 2014 International Conference on
  • Conference_Location
    Dhaka
  • Print_ISBN
    978-1-4799-5179-6
  • Type

    conf

  • DOI
    10.1109/ICIEV.2014.6850865
  • Filename
    6850865