Copper bump bonding with electroless metal cap on 3 dimensional stacked structure

Author

Tomita, Yoshihiro ; Tago, Masamoto ; Nemoto, Yoshihiko ; Takahashi, Kenji

Author_Institution

Electron. Syst. Integration Technol. Res. Dept., Tsukuba Res. Center, Ibaraki, Japan

fYear

2000

fDate

2000

Firstpage

286

Lastpage

291

Abstract

CBB, the copper bump bonding process, can perform flip-chip bonding in 100 μm pitch with a thin electroless metal cap on the surface, leading to interconnection of the copper through-hole electrodes on a 3D stacked structure. In this paper, the results of the technical studies on both the electroless plating process and the thermo-compressive bonding process are introduced, which are key technologies for expansion to interconnections with 20 μm pitch to realize advanced 3D stacked structures

Keywords

copper; electrodes; electroless deposition; flip-chip devices; integrated circuit bonding; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; lead bonding; 100 micron; 20 micron; 3D stacked structure; Cu; copper bump bonding; copper bump bonding process; copper through-hole electrode interconnection; electroless metal cap; electroless plating process; flip-chip bond pitch; flip-chip bonding; interconnection pitch; thermo-compressive bonding process; thin electroless metal cap; Bonding processes; Copper; Electrodes; Encapsulation; Etching; Gold; Integrated circuit interconnections; Large scale integration; Packaging; Stacking;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference, 2000. (EPTC 2000). Proceedings of 3rd

Print_ISBN

0-7803-6644-1

Type

conf

DOI

10.1109/EPTC.2000.906388

Filename

906388