Title :
Monolithically integrated InP-based pin-HEMT OEIC receiver with a bandwidth of 18 GHz
Author :
Klepser, B.-U.H. ; Spicher, J. ; Beck, M. ; Bergamaschi, C. ; Patrick, W. ; Bachtold, W.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
fDate :
25 Feb.-1 March 1996
Abstract :
Summary form only given. High-speed photoreceivers are required for multigigabit/s transmission systems. For higher data rates, monolithically integrated photoreceivers offer the advantage of improved performance resulting from the reduction of parasitic capacitances and inductances. Pin-HEMT integration was chosen for this work because, at the present time, InP-based HEMTs have the highest cut-off frequencies and the lowest noise of all three terminal devices.
Keywords :
HEMT integrated circuits; III-V semiconductors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; 18 GHz; InP; InP-based pin-HEMT OEIC receiver; high-speed photoreceivers; higher data rates; highest cut-off frequencies; lowest noise; monolithically integrated; monolithically integrated photoreceivers; multigigabit/s transmission systems; parasitic capacitances; parasitic inductance; pin-HEMT integration; three terminal devices; Bandwidth; Circuits; Electrons; Frequency; HEMTs; Low-noise amplifiers; MODFETs; Noise figure; Optoelectronic devices; Photodiodes;
Conference_Titel :
Optical Fiber Communications, 1996. OFC '96
Print_ISBN :
1-55752-422-X
DOI :
10.1109/OFC.1996.907645
