DocumentCode :
1743316
Title :
A high speed and low voltage BiCMOS tristate buffer with positive and negative charge pump
Author :
Suriyaammaranon, C. ; Dejhan, K. ; Cheevasuvit, F. ; Soonyeekan, C.
Author_Institution :
Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
11
Abstract :
A novel high speed, low voltage BiCMOS tristate buffer is presented. The single MOS driving with pass transistor technique is used to improve the driving capability. Furthermore, the positive and negative charge pump with complementary BiCMOS technique to eliminate the voltage loss due to base-emitter turn on voltage is used to enhance the driving capability and realize high speed, low voltage with full swing operation. The simulation results have shown that it outperforms other previous tristate circuits
Keywords :
BiCMOS digital integrated circuits; buffer circuits; high-speed integrated circuits; base-emitter turn on voltage; driving capability; low voltage BiCMOS; negative charge pump; pass transistor technique; positive charge pump; tristate buffer; voltage loss; Application specific integrated circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Charge pumps; Degradation; Impedance; Low voltage; MOSFETs; Power dissipation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems, 2000. ICECS 2000. The 7th IEEE International Conference on
Conference_Location :
Jounieh
Print_ISBN :
0-7803-6542-9
Type :
conf
DOI :
10.1109/ICECS.2000.911466
Filename :
911466
Link To Document :
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