Title :
0.25 μm SOI technologies performance for low-power radio-frequency applications
Author :
Rozeau, O. ; Haendler, S. ; Jomash, J. ; Boussey, J. ; Balestra, F. ; Raynaud, C. ; Pelloie, J.L.
Author_Institution :
LPCS, Grenoble, France
Abstract :
In this work, two types of 0.25 μm SOI MOSFET structures, partially- (PD) and fully-depleted (FD), are compared from the point of view of low-frequency noise and RF performances for device design. Fully-depleted technology with and without salicide process is used. The impact of the floating body effect is also investigated to be taken into account in RF design
Keywords :
MOSFET; low-power electronics; microwave field effect transistors; semiconductor device metallisation; silicon-on-insulator; 0.25 micron; MOSFET structures; RF performances; SOI technologies; Si; floating body effect; fully-depleted structures; low-power radio-frequency applications; partially-depleted structures; salicide process; Cutoff frequency; Integrated circuit noise; Low-frequency noise; MMICs; MOSFET circuits; Predictive models; Radio frequency; Scattering parameters; Transconductance; Voltage;
Conference_Titel :
Electronics, Circuits and Systems, 2000. ICECS 2000. The 7th IEEE International Conference on
Conference_Location :
Jounieh
Print_ISBN :
0-7803-6542-9
DOI :
10.1109/ICECS.2000.911481
