Title :
An improved switched-capacitor resonator for high-speed bandpass ΣΔ modulator
Author :
Guan, X. ; Xu, Y.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Singapore Univ., Singapore
Abstract :
This paper presents an improved single-path switched-capacitor resonator with a gain of 0.5. The proposed resonator significantly reduces the worst-case capacitive loading and allows fast settling during the operation. The resonator is designed using a 0.8-μm CMOS technology. The simulation result shows that the worst-case settling time (0.1 percent accuracy) of the proposed resonator is 14.7 ns, about 40% fast than the previously reported ones. A fourth order bandpass ΣΔ modulator is constructed with the proposed resonator and its performance is verified by simulation
Keywords :
CMOS integrated circuits; high-speed integrated circuits; sigma-delta modulation; switched capacitor networks; 0.8 micron; 14.7 ns; CMOS technology; high-speed bandpass sigma-delta modulator; settling time; switched-capacitor resonator; worst-case capacitive loading; CMOS technology; Capacitors; Delay; Delta modulation; Frequency conversion; Noise robustness; Noise shaping; Prototypes; Resonator filters; Transfer functions;
Conference_Titel :
Circuits and Systems, 2000. IEEE APCCAS 2000. The 2000 IEEE Asia-Pacific Conference on
Conference_Location :
Tianjin
Print_ISBN :
0-7803-6253-5
DOI :
10.1109/APCCAS.2000.913607
