Title :
Statistical verification of relation between L.F. and H.F. noise level of bipolar transistors
Author :
Zaklikiewicz, Andrzej M.
Author_Institution :
Inst. of Electron Technol., Warsaw, Poland
Abstract :
In this paper, statistical investigations of the relationship between L.F. noise and H.F. noise of type BF200 bipolar transistors are described. 1/f noise is the main kind of low frequency noise in semiconductors and semiconductor devices. The results of comparative measurements of the low frequency noise in selected bipolar transistors, designated to work in different frequency ranges, are also presented
Keywords :
1/f noise; bipolar transistors; electric noise measurement; semiconductor device noise; statistical analysis; 1/f noise; BF200 bipolar transistors; HF noise level; LF noise level; low frequency noise; semiconductor devices; Bipolar transistors; Frequency measurement; Low-frequency noise; Microwave devices; Microwave measurements; Microwave transistors; Noise level; Noise measurement; Semiconductor device noise; Temperature;
Conference_Titel :
Microwaves, Radar and Wireless Communications. 2000. MIKON-2000. 13th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
83-906662-3-5
DOI :
10.1109/MIKON.2000.913933
