Title :
ZnTe:N back contacts to CdS/CdTe solar cells
Author :
Makhratchev, K. ; Price, K.J. ; Ma, X. ; Simmons, D.A. ; Drayton, J. ; Ludwig, K. ; Gupta, A. ; Bohn, R.G. ; Compaan, A.D.
Author_Institution :
Dept. of Phys. & Astron., Toledo Univ., OH, USA
Abstract :
We report the development of nitrogen-doped ZnTe back contacts for CdS/CdTe solar cells. Reproducible p-type doping of the ZnTe was achieved by reactive RF magnetron sputtering with Ar/N2 gas mixtures. The conductivity of the doped films was about five orders of magnitude higher than that of intrinsic ZnTe sputtered films. These films were used as contacts for glass/SnO2/CdS/CdTe solar cells. The contact structure of ZnTe/ZnTe:N/Ni showed slightly lower initial performance but improved stability compared to our evaporated Cu/Au contacts for a 3000 hr test cycle at 100°C
Keywords :
II-VI semiconductors; cadmium compounds; electrical contacts; nitrogen; solar cells; sputtered coatings; zinc compounds; 100 C; 3000 h; Ar-N2; Ar/N2 gas mixtures; CdS-CdTe; CdS/CdTe solar cells; ZnTe/ZnTe:N/Ni contact structure; ZnTe:N; ZnTe:N back contacts; conductivity; doped films; glass/SnO2/CdS/CdTe solar cells; intrinsic ZnTe sputtered films; nitrogen-doped ZnTe back contacts; reactive RF magnetron sputtering; reproducible p-type doping; stability improvement; Argon; Conductive films; Conductivity; Doping; Glass; Photovoltaic cells; Radio frequency; Sputtering; Stability; Zinc compounds;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915874
