Title :
Microstructural properties of the surface of Cu(In,Ga)Se2 thin films
Author :
Hasoon, F.S. ; Yan, Y. ; Jones, K.M. ; Althani, H. ; Alleman, J. ; Al-Jassim, M.M. ; Noufi, R.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
We examine the micro-structural properties, e.g. defects due to misorientation, and dislocations, for CIGS films prepared by our “3-stage process.” We found using TEM and EDS that the composition and certain structural properties of the surface region are different from the bulk. Specifically, we observe high density of dislocations in a plane parallel to the surface, a distance of 150 to 250 nm. The extent of the dislocation network seems to correlate with the performance of devices based on these films
Keywords :
copper compounds; crystal microstructure; dislocations; gallium compounds; indium compounds; semiconductor thin films; solar cells; surface structure; ternary semiconductors; transmission electron microscopy; 150 to 250 nm; 3-stage process; CIGS films; Cu(In,Ga)Se2 thin film surface; Cu(InGa)Se2; EDS; TEM; defects; dislocations; microstructural properties; misorientation; solar cells; structural properties; surface region; Fabrication; Laboratories; Renewable energy resources; Semiconductor materials; Semiconductor thin films; Sputtering; Substrates; Temperature; Transistors; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915884
