DocumentCode
1744335
Title
Using single source precursors and spray chemical vapor deposition to grow thin-film CuInS2 [solar cells]
Author
Harris, Jerry D. ; Hehemann, David G. ; Cowen, Jonathan E. ; Hepp, Aloysius F. ; Raffaelle, Ryne P. ; Hollingsworth, Jennifer A.
Author_Institution
Sch. of Technol., Kent State Univ., OH, USA
fYear
2000
fDate
2000
Firstpage
563
Lastpage
566
Abstract
Solar cell thin films of CuInS2 were deposited on fused silica, stainless steel, KaptonTM and polybenzobisoxazole using the single source organometallic precursor (PPh3)2 CuIn(SEt)4, in conjunction with spray chemical vapor deposition. Films were deposited at temperatures ranging from 325-360°C. As deposited, the films had a thickness on the order of 200 Å. The grain structure of the films was found to vary with carrier gas flow rate and substrate temperature
Keywords
CVD coatings; chemical vapour deposition; copper compounds; crystal microstructure; indium compounds; semiconductor device measurement; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; spray coating techniques; spray coatings; 200 angstrom; 325 to 360 C; CuInS2; CuInS2 thin-film solar cell growth; KaptonTM; carrier gas flow rate; fused silica; grain structure; polybenzobisoxazole; single source organometallic precursors; spray chemical vapor deposition; stainless steel; substrate temperature; Chemical vapor deposition; Crystalline materials; Photovoltaic cells; Photovoltaic systems; Solar power generation; Space technology; Spraying; Sputtering; Substrates; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location
Anchorage, AK
ISSN
0160-8371
Print_ISBN
0-7803-5772-8
Type
conf
DOI
10.1109/PVSC.2000.915900
Filename
915900
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