Title :
Influence of hydrogen, boron, and ion energy on the structure of microcrystalline silicon in plasma-assisted chemical vapor deposition
Author :
Oshita, Yuichi ; Okitsu, K. ; Imaizumi, Masayuki ; Yamaguchi, K. ; Yamaguchi, M. ; Hara, T. ; Ito, T. ; Fukushima, H. ; Ryoji, M. ; Fujii, S. ; Kawamura, K.
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
Abstract :
Si films are deposited by electron beam excited plasma CVD. Microcrystalline Si with no preferential orientation is grown at 300°C from 100% SiH4 without H2 dilution. The grain size increases as the substrate temperature increases. The film structure becomes columnar caused by the higher temperature, the B doping, and the decrease of the ion energy. We discuss the influences of the hydrogen injection, the in-situ impurity doping, and the ion energy on the crystalline structures
Keywords :
boron; electron beam applications; elemental semiconductors; grain size; hydrogen; impurities; plasma CVD; plasma CVD coatings; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; 300 C; B doping; Si films; Si:B; SiH4; boron doping; columnar film structure; crystalline structures; electron beam excited plasma CVD; grain size; hydrogen; hydrogen injection; in-situ impurity doping; ion energy; microcrystalline silicon; plasma-assisted chemical vapor deposition; substrate temperature; thin film solar cells; Boron; Crystallization; Doping; Electron beams; Grain size; Hydrogen; Impurities; Plasma temperature; Semiconductor films; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916016
