Title :
Carbon based photovoltaic solar cell: n-C/p-C junction on p-Si substrate
Author :
Umeno, M. ; Krishna, K.M. ; Tokita, Y. ; Soga, T. ; Jimbo, T.
Author_Institution :
Res. Center for Microstructure Devices, Nagoya Inst. of Technol., Japan
Abstract :
Amorphous carbon (a-C) as a semiconductor in heterojunction solar cells, such as C/Si, C/GaAs, etc., were already reported by various groups. Here, we present the rectifying current-voltage characteristics of n-C/p-C junction. The cell, n-C/p-C on p-Si substrate, reveals a short circuit current density of 23.04 mA/cm2, open circuit voltage of 0.346 V, and a power conversion efficiency of 2.28%, under AM0 and 1 sun illumination conditions. The spectral response of the cell was explained through the absorption characteristics of the two individual carbon layers
Keywords :
absorption; amorphous semiconductors; carbon; current density; elemental semiconductors; optical properties; p-n junctions; rectification; short-circuit currents; silicon; solar cells; substrates; 0.346 V; 1 sun illumination condition; 2.28 percent; AM0 illumination condition; C-C; Si; absorption characteristics; amorphous carbon; carbon based photovoltaic solar cell; carbon layers; n-C/p-C junction; open circuit voltage; p-Si substrate; power conversion efficiency; rectifying current-voltage characteristics; semiconductor; short circuit current density; spectral response; Amorphous materials; Current-voltage characteristics; Gallium arsenide; Heterojunctions; Photovoltaic cells; Photovoltaic systems; Short circuit currents; Solar power generation; Substrates; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916043
