Amorphous silicon based tandem junction thin-film technology: a manufacturing perspective

Author

Arya, R.R. ; Bennett, M. ; Lin, G. ; Willing, F. ; Newton, J. ; Ganguly, G. ; Liu, S.

Author_Institution

BP Solar, Toano, VA, USA

fYear

2000

fDate

2000

Firstpage

1433

Lastpage

1436

Abstract

BP Solar built a 10 MW capacity thin-film manufacturing plant (TF1) at Toano, Virginia, USA in 1997. This plant is based on a-Si/a-SiGe tandem junction technology. Over the past three years, the plant has made tremendous improvements in throughput and module power while maintaining high yields. The plant has expanded its product line to include modules with power from 5 W to 50 W. The use of the present product-line as a diagnostic tool to address the multi-dimensional challenges of amorphous silicon based alloy process scale-up and transfer is discussed

Keywords

Ge-Si alloys; amorphous semiconductors; elemental semiconductors; p-n heterojunctions; semiconductor device manufacture; semiconductor thin films; silicon; solar cells; 10 MW; 5 to 50 W; BP Solar; Si-SiGe; USA; a-Si/a-SiGe tandem junction solar cell technology; diagnostic tool; manufacturing perspective; module power; production yield; thin-film manufacturing plant; throughput; Amorphous silicon; Glass; Manufacturing; Production; Semiconductor thin films; Silicon alloys; Sputtering; Substrates; Temperature; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916162

Filename

916162