Title :
Thin film imaging technology on glass and plastic
Author :
Nathan, A. ; Park, B. ; Sazonov, A. ; Tao, S. ; Gu, Z.H. ; Chan, I. ; Servati, P. ; Karim, K. ; Charania, T. ; Striakhilev, D. ; Ma, Q. ; Murthy, R.V.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
Hydrogenated amorphous silicon (a-Si:H) technology offers a viable technological alternative for improved imaging of optical signals and high energy radiation. This paper reviews X-ray imaging technology in terms of detector operating principles, including optoelectronic characteristics, and fabrication process issues related to pixel (Schottky diode detector plus thin film transistor) integration. Recent results which describe the extension of the current fabrication processes to low (~120°C) temperature are also presented. The low temperature processing enables fabrication of thin electronics on flexible (polymer) substrates
Keywords :
Schottky diodes; X-ray detection; X-ray imaging; amorphous semiconductors; doping profiles; elemental semiconductors; hydrogen; image sensors; semiconductor thin films; silicon; thin film transistors; 120 C; Schottky diode detector; Si:H; X-ray imaging technology; a-Si:H technology; detector operating principles; fabrication process issues; fabrication processes; flexible polymer substrates; glass substrates; high energy radiation; hydrogenated amorphous silicon technology; imaging; low temperature processing; optical signals; optoelectronic characteristics; pixel integration; plastic substrates; thin film imaging technology; thin film transistor; Amorphous silicon; Glass; Optical device fabrication; Optical films; Optical imaging; Plastic films; Temperature; X-ray detection; X-ray detectors; X-ray imaging;
Conference_Titel :
Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Conference_Location :
Tehran
Print_ISBN :
964-360-057-2
DOI :
10.1109/ICM.2000.916404
