Title :
A methodology for constructing two-transistor multistable circuits
Author :
Shou, X. ; Goldgeisser, L.B. ; Green, M.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA
Abstract :
This paper analyzes the nonlinearities in two-transistor circuits that give rise to the existence of multiple operating points. Techniques for constructing circuits, using both MOS and bipolar transistors, that possess five operating points (3 of which are stable) are presented. For the first time, a two-BJT circuit that possesses five operating points is reported. It clearly disproves the claim that two-transistor circuits cannot possess more than three operating points
Keywords :
MOSFET circuits; bipolar transistor circuits; circuit bistability; nonlinear network synthesis; MOS transistors; MOSFET latch; bipolar transistors; multiple operating points; two-BJT circuit; two-transistor circuit nonlinearities; two-transistor multistable circuit construction methodology; Bipolar transistor circuits; Bipolar transistors; CMOS technology; History; Latches; MOSFETs; Measurement standards; Nonlinear circuits; Resistors; Voltage;
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
DOI :
10.1109/ISCAS.2001.921326
