• DocumentCode
    1744989
  • Title

    Reconciliation of methods for bipolar transistor thermal resistance extraction

  • Author

    Scott, Jonathan

  • Author_Institution
    Microwave Technol. Center, Agilent Technol., Santa Rosa, CA, USA
  • Volume
    3
  • fYear
    2001
  • fDate
    6-9 May 2001
  • Firstpage
    465
  • Abstract
    The various methods in the literature for determination of bipolar transistor thermal resistance are reviewed. Apparent differences are reconciled with two definitions of Rth. Extensive measurements on III-V HBTs, where Rth is variable and relatively large, reveal limitations. Most appropriate methods are identified. Some caveats are reported
  • Keywords
    bipolar transistors; semiconductor device manufacture; thermal resistance measurement; III-V HBTs; bipolar transistor; semiconductor device measurement; thermal resistance extraction; Bipolar transistors; Electrical resistance measurement; Equations; Extrapolation; Power dissipation; Power measurement; Temperature dependence; Thermal resistance; Thermal variables measurement; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    0-7803-6685-9
  • Type

    conf

  • DOI
    10.1109/ISCAS.2001.921348
  • Filename
    921348
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1744989