Title :
Reconciliation of methods for bipolar transistor thermal resistance extraction
Author_Institution :
Microwave Technol. Center, Agilent Technol., Santa Rosa, CA, USA
Abstract :
The various methods in the literature for determination of bipolar transistor thermal resistance are reviewed. Apparent differences are reconciled with two definitions of Rth. Extensive measurements on III-V HBTs, where Rth is variable and relatively large, reveal limitations. Most appropriate methods are identified. Some caveats are reported
Keywords :
bipolar transistors; semiconductor device manufacture; thermal resistance measurement; III-V HBTs; bipolar transistor; semiconductor device measurement; thermal resistance extraction; Bipolar transistors; Electrical resistance measurement; Equations; Extrapolation; Power dissipation; Power measurement; Temperature dependence; Thermal resistance; Thermal variables measurement; Time measurement;
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
DOI :
10.1109/ISCAS.2001.921348
