Title :
Modelling of effects of temperature profile in the MOS transistor characteristics
Author :
Nooshabadi, Saeid
Author_Institution :
Sch. of Electr. & Telecommun. Eng., New South Wales Univ., Sydney, NSW, Australia
Abstract :
An accurate and efficient modeling for the MOS transistor in the presence of a nonuniform temperature profile has been developed. The sensitivity of the important electrical parameters Id and Gm with respect to nonuniform thermal profile in the MOS structure has been investigated. The results show that although the temperature profile along the device width is of little consequence, the temperature profile along the length will give rise to a significant change in the output characteristics
Keywords :
MOSFET; semiconductor device models; temperature distribution; MOS transistor characteristics; device length; device width; electrical parameters; modeling; nonuniform temperature profile; output characteristics; Analytical models; Australia; Circuit simulation; Equations; Knee; MOSFETs; Temperature distribution; Temperature sensors; Threshold voltage; Very large scale integration;
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
DOI :
10.1109/ISCAS.2001.921793
