Title :
Modeling of random channel parameter variations in MOS transistors
Author :
Lan, Mao-Feng ; Geiger, Randall
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA
Abstract :
Widely used approaches to modeling random effects and extracting random parameters in matching-critical circuits are based upon models derived under the widely accepted premise that distributed parameter devices can be modeled with lumped parameter models. In this paper, a new stochastic approach based upon a distributed parameter model is presented that offers improvement in predicting the effects of random parameter variations on device matching
Keywords :
MOSFET; impedance matching; semiconductor device models; stochastic processes; MOS transistors; device matching; distributed parameter devices; lumped parameter models; matching-critical circuits; modeling; random channel parameter variations; random parameter variations; stochastic approach; Area measurement; Character recognition; Current measurement; Differential amplifiers; MOSFETs; Mirrors; Mixed analog digital integrated circuits; Predictive models; Stochastic processes; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
DOI :
10.1109/ISCAS.2001.921794
