Monolithic tunable capacitors for RF applications

Author

Stadius, Kari ; Kaunisto, Risto ; Porra, Veikko

Author_Institution

Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo, Finland

Volume

1

fYear

2001

fDate

6-9 May 2001

Firstpage

488

Abstract

Passive and active tunable capacitors for RF applications are discussed and compared in this paper. In silicon IC technologies passive tunable capacitors are either based on the p-n junction or the metal-semiconductor junction, i.e. the MOS-structure. Active capacitors discussed in this paper are based on the Miller effect or on the current steering principle (Gilbert cell). Modeling issues are discussed and measurement results presented for the passive structures. For active circuits the comparison is based on simulations and experimental results obtained from VCO circuits

Keywords

BiCMOS analogue integrated circuits; MMIC oscillators; MOS capacitors; UHF integrated circuits; UHF oscillators; active networks; semiconductor device models; silicon; tuning; varactors; voltage-controlled oscillators; BiCMOS process; Gilbert cell; MOS structure; Miller effect; RF applications; Si; Si IC technologies; VCO circuits; active tunable capacitors; current steering principle; metal-semiconductor junction base device; modeling; monolithic tunable capacitors; p-n junction based device; passive tunable capacitors; Capacitors; Circuit optimization; Diodes; Parasitic capacitance; Q factor; Radio frequency; Tunable circuits and devices; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6685-9

Type

conf

DOI

10.1109/ISCAS.2001.921899

Filename

921899