Title :
SiGe HMOSFET differential pair
Author :
Michelakis, K. ; Despotopoulos, S. ; Badcock, S.G. ; Papavassiliou, Christos ; Neill, A. G O ; Toumazou, Christofer
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Abstract :
A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can he exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results were obtained for the performance of a differential pair. At the specified power of 1.25 mW the input range of the SiGe differential pair at which the percent nonlinearity is below 1%, is roughly twice that of its Si counterpart. Additionally the SiGe circuit is more power efficient since an increase of the power consumption from 1 mW to 1.25 mW accounts for an improvement of about 40% in its input range, as compared to only 10% for Si
Keywords :
Ge-Si alloys; MOSFET circuits; circuit CAD; differential amplifiers; low-power electronics; semiconductor device models; semiconductor materials; technology CAD (electronics); 1.25 mW; BSIM3v3 model; HMOSFET differential pair; SiGe; TCAD data; linear analogue circuits; linearity; output current-voltage characteristics; percent nonlinearity; power consumption; CMOS technology; Circuits; Doping; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; MOSFETs; Medical simulation; Silicon germanium;
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
DOI :
10.1109/ISCAS.2001.921947
