DocumentCode
1745268
Title
A high-efficiency CMOS charge pump circuit
Author
Lai, Sheng-Yeh ; Wang, Jinn-Shyan
Author_Institution
Dept. of Electr. Eng., Nat. Chung-Cheng Univ., Chia-Yi, Taiwan
Volume
4
fYear
2001
fDate
6-9 May 2001
Firstpage
406
Abstract
A new high-efficiency CMOS charge pump circuit is proposed in this paper. By using two specially designed auxiliary pump circuits, the impact of the threshold drop and the body effect on the main pump circuit can be suppressed significantly. Simulation results show the pumping efficiency of the new circuit is superior to all the conventional circuits
Keywords
CMOS integrated circuits; VLSI; integrated circuit design; leakage currents; low-power electronics; CMOS charge pump circuit; VLSI; auxiliary pump circuits; body effect; efficiency; low-power electronics; pumping efficiency; threshold drop; Capacitors; Charge pumps; Charge transfer; Circuit simulation; Clocks; Low voltage; MOS devices; MOSFETs; Parasitic capacitance; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6685-9
Type
conf
DOI
10.1109/ISCAS.2001.922259
Filename
922259
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