DocumentCode :
1745287
Title :
Static power consumption management in CMOS memories
Author :
Turier, A. ; Ammar, L. Ben ; Amara, A.
Author_Institution :
ATMEL, Rousset, France
Volume :
4
fYear :
2001
fDate :
6-9 May 2001
Firstpage :
506
Abstract :
This paper focus on the selective precharge concept which is used in memory design in order to reduce dynamic power consumption. We show how this technique can reduce drastically static power consumption. Experimental results obtained from a test circuit are given and compared to one using substrate back bias. Substantial gains are reported in this paper for ROM, single and double-port SRAMs memories
Keywords :
CMOS memory circuits; SRAM chips; low-power electronics; read-only storage; CMOS memory circuit; ROM; double-port SRAM; low-power design; selective precharge; single-port SRAM; static power consumption management; substrate back bias; CMOS logic circuits; Circuit testing; Energy consumption; Energy management; Frequency; Memory management; Power supplies; Random access memory; Read only memory; Subthreshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
Type :
conf
DOI :
10.1109/ISCAS.2001.922285
Filename :
922285
Link To Document :
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