Title :
Effectivity of standby-energy reduction techniques for deep sub-micron CMOS
Author :
van der Meer, P.R. ; van Staveren, A.
Author_Institution :
Electron. Res. Lab., Delft Univ. of Technol., Netherlands
Abstract :
Present and future transistor technologies suffer from increasing standby leakage. In this paper the effectivity of standby-energy reduction techniques will be expressed in terms of a minimum required standby time. Beyond this time the corresponding standby-energy reduction is profitable for the specific application. Techniques known from literature are evaluated in the context of GSM and UMTS applications. The Triple-S technique is shown to be able to double the standby time of a UMTS application
Keywords :
CMOS integrated circuits; leakage currents; low-power electronics; GSM; Triple-S technique; UMTS; deep submicron CMOS IC; standby energy reduction; standby leakage; standby time; transistor technology; 3G mobile communication; CMOS digital integrated circuits; CMOS process; CMOS technology; Diodes; Energy dissipation; Information processing; Information technology; Leakage current; Voltage;
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
DOI :
10.1109/ISCAS.2001.922307
