Title :
110 MHz IF-baseband CMOS receiver for J-CDMA/AMPS application
Author :
Miyashita, Kiyoshi ; Ichikawa, Susumu ; Nakao, Yoshihiro ; Shimataka, Naoto ; Otuki, Takuji
Author_Institution :
Asahi-Kasei Microsyst. Co. Ltd., Kanagawa, Japan
Abstract :
This paper describes a full CMOS Japanese-CDMA/AMPS dual mode intermediatefrequency (IF)-baseband receiver developed in a mature 0.6 μm double-poly triple-metal technology. IF automatic gain control (AGC) block has over 90 dB dynamic range with no attenuator or source degeneration resistor required. Provided with such architecture, this receiver displayed both high linearity and low noise performance. An overall maximum gain of more than 90 dB and the noise figure were 10 dB. Third-order input intercept point (IIP3) was 11 dBm with respect to 500 ohm. This super high IIP3 receiver consumes only 24 mA for CDMA mode and 18 mA for AMPS mode. Standby current is less than 1 uA
Keywords :
CMOS analogue integrated circuits; automatic gain control; cellular radio; code division multiple access; integrated circuit noise; large scale integration; 0.6 micron; 10 dB; 110 MHz; 18 mA; 24 mA; 90 dB; IF-baseband CMOS receiver; J-CDMA/AMPS application; automatic gain control; double-poly triple-metal technology; linearity; low noise performance; standby current; third-order input intercept point; Equations; Filters; Impedance; Intrusion detection; Linearity; MOSFETs; Multiaccess communication; Performance gain; Topology; Transconductance;
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
DOI :
10.1109/ISCAS.2001.922331
