EEPROM programming study-time and degradation aspects

Author

Caner, P. ; Bouchakour, R. ; Harabech, N. ; Boivin, Ph ; Mirabel, J.M.

Author_Institution

CNRS, Marseille, France

Volume

4

fYear

2001

fDate

6-9 May 2001

Firstpage

846

Abstract

Electrically-erasable programmable read-only memory (EEPROM) reliability is of crucial interest. In a previous study of EEPROM cells programming we have shown that it is possible to decrease the electric field across the tunnel oxide with an appropriate programming signal without any change in the device. This improves the endurance of the memory cell with the same injected charge and the same performances. Another way to decrease the degradation of the oxide is to reduce the duration of the stress induced by the electric field across the tunnel oxide. Using the previous study, we show it is possible to reduce the programming time by a factor of ten compared to a standard signal

Keywords

EPROM; PLD programming; cellular arrays; integrated circuit modelling; integrated circuit reliability; EEPROM programming; degradation aspects; electric field; endurance; injected charge; memory cell; programming signal; programming time; reliability; tunnel oxide; Circuit simulation; Degradation; EPROM; Integrated circuit modeling; Nonvolatile memory; Pulse shaping methods; Shape; Stress; Testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6685-9

Type

conf

DOI

10.1109/ISCAS.2001.922370

Filename

922370