Title :
SAW-semiconductor coupled device with stripe shaped semiconductor films
Author :
Koh, K. ; Suda, T. ; Aoki, Y. ; Hong, C. ; Kaneshiro, C. ; Hohkawa, K.
Author_Institution :
Kanagawa Inst. of Technol., Japan
Abstract :
In this paper, we proposed the epitaxial lift-off (ELO) process of stripe GaAs film using polyimide film for realization of mass production technology of ELO film bonding. In order to develop new SAW-semiconductor coupled devices, we carried out experiments and investigated the basic characteristics of the interaction between SAW and carriers in a stripe film when it is illuminated by light. The experimental results indicate that the stripe structure is effective for reducing the attenuation of SAW device. We also proposed some functional devices with the stripe shaped semiconductor film
Keywords :
III-V semiconductors; gallium arsenide; semiconductor technology; semiconductor thin films; surface acoustic wave devices; ELO film bonding; GaAs; SAW-semiconductor coupled device; SAW/carriers interaction; attenuation reduction; epitaxial liftoff process; functional devices; mass production technology; polyimide film; stripe GaAs film; stripe shaped semiconductor films; Bonding; Gallium arsenide; Mass production; Piezoelectric films; Polyimides; Semiconductor films; Stress; Substrates; Surface acoustic wave devices; Surface acoustic waves;
Conference_Titel :
Ultrasonics Symposium, 2000 IEEE
Conference_Location :
San Juan
Print_ISBN :
0-7803-6365-5
DOI :
10.1109/ULTSYM.2000.922504
