DocumentCode
1745396
Title
Second leaky surface wave propagation on LiTaO3 with thin dielectric films
Author
Kakio, Shoji ; Shimo, Takeshi ; Nakagawa, Yasuhiko
Author_Institution
Fac. of Eng., Yamanashi Univ., Kofu, Japan
Volume
1
fYear
2000
fDate
36800
Firstpage
321
Abstract
The propagation characteristics of the second leaky surface wave on (90°, 90°, 31°)-cut LiTaO3 with a thin film of dielectric, such as silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5), are investigated theoretically and experimentally. The theoretical analysis showed that the attenuation for the metallized surface as a function of SiO2 film thickness decreases exponentially. In fact, for the metallized surface of (90°, 90°, 31°)-cut LiTaO3 with an RF-sputtered SiO2 film, the measured propagation losses decreased to approximately one-third in comparison to those of the sample without the film
Keywords
dielectric thin films; lanthanum compounds; surface acoustic waves; LiTaO3; LiTaO3 substrate; RF sputtering; SiO2; Ta2O5; attenuation; dielectric thin film; propagation loss; second leaky surface acoustic wave; silicon dioxide; surface metallization; tantalum pentoxide; Acoustic waves; Attenuation; Dielectric films; Dielectric substrates; Dielectric thin films; Metallization; Surface acoustic wave devices; Surface acoustic waves; Surface waves; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2000 IEEE
Conference_Location
San Juan
ISSN
1051-0117
Print_ISBN
0-7803-6365-5
Type
conf
DOI
10.1109/ULTSYM.2000.922563
Filename
922563
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