• DocumentCode
    1745396
  • Title

    Second leaky surface wave propagation on LiTaO3 with thin dielectric films

  • Author

    Kakio, Shoji ; Shimo, Takeshi ; Nakagawa, Yasuhiko

  • Author_Institution
    Fac. of Eng., Yamanashi Univ., Kofu, Japan
  • Volume
    1
  • fYear
    2000
  • fDate
    36800
  • Firstpage
    321
  • Abstract
    The propagation characteristics of the second leaky surface wave on (90°, 90°, 31°)-cut LiTaO3 with a thin film of dielectric, such as silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5), are investigated theoretically and experimentally. The theoretical analysis showed that the attenuation for the metallized surface as a function of SiO2 film thickness decreases exponentially. In fact, for the metallized surface of (90°, 90°, 31°)-cut LiTaO3 with an RF-sputtered SiO2 film, the measured propagation losses decreased to approximately one-third in comparison to those of the sample without the film
  • Keywords
    dielectric thin films; lanthanum compounds; surface acoustic waves; LiTaO3; LiTaO3 substrate; RF sputtering; SiO2; Ta2O5; attenuation; dielectric thin film; propagation loss; second leaky surface acoustic wave; silicon dioxide; surface metallization; tantalum pentoxide; Acoustic waves; Attenuation; Dielectric films; Dielectric substrates; Dielectric thin films; Metallization; Surface acoustic wave devices; Surface acoustic waves; Surface waves; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2000 IEEE
  • Conference_Location
    San Juan
  • ISSN
    1051-0117
  • Print_ISBN
    0-7803-6365-5
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2000.922563
  • Filename
    922563