Title :
Optimization of the sputtering deposition parameters of highly oriented piezoelectric AlN films
Author :
Caliendo, C. ; Cimmino, A. ; Imperatori, P. ; Verona, E.
Author_Institution :
Istituto di Acustica O.M. Corbino, CNR, Rome, Italy
Abstract :
AlN films have been successfully deposited by reactive sputtering technique on silicon substrates with different interface layers. Uniform, crack free, c-axis oriented, highly adhesive films have been obtained in a thickness range between 1 and 5.6 μm. Measurements of the d33 piezoelectric strain constant have been performed in order to evaluate the piezoelectric characteristics of the films. X-ray diffraction measurements (XRD) have been performed to investigate the crystal structure and the crystallographic orientation of the films, in order to optimize the deposition process parameters and to study the influence of the substrate on the AlN polycrystals orientation
Keywords :
X-ray diffraction; adhesion; aluminium compounds; piezoelectric thin films; sputtered coatings; AlN; AlN polycrystalline thin film; Si; X-ray diffraction; adhesion; crystal structure; crystallographic orientation; interface layer; piezoelectric strain constant; process optimization; reactive sputter deposition; silicon substrate; Performance evaluation; Piezoelectric films; Plasma temperature; Radio frequency; Semiconductor films; Silicon; Sputtering; Strain measurement; Substrates; Very large scale integration;
Conference_Titel :
Ultrasonics Symposium, 2000 IEEE
Conference_Location :
San Juan
Print_ISBN :
0-7803-6365-5
DOI :
10.1109/ULTSYM.2000.922569
