Optimization of the sputtering deposition parameters of highly oriented piezoelectric AlN films

Author

Caliendo, C. ; Cimmino, A. ; Imperatori, P. ; Verona, E.

Author_Institution

Istituto di Acustica O.M. Corbino, CNR, Rome, Italy

Volume

1

fYear

2000

fDate

36800

Firstpage

345

Abstract

AlN films have been successfully deposited by reactive sputtering technique on silicon substrates with different interface layers. Uniform, crack free, c-axis oriented, highly adhesive films have been obtained in a thickness range between 1 and 5.6 μm. Measurements of the d₃₃ piezoelectric strain constant have been performed in order to evaluate the piezoelectric characteristics of the films. X-ray diffraction measurements (XRD) have been performed to investigate the crystal structure and the crystallographic orientation of the films, in order to optimize the deposition process parameters and to study the influence of the substrate on the AlN polycrystals orientation

Keywords

X-ray diffraction; adhesion; aluminium compounds; piezoelectric thin films; sputtered coatings; AlN; AlN polycrystalline thin film; Si; X-ray diffraction; adhesion; crystal structure; crystallographic orientation; interface layer; piezoelectric strain constant; process optimization; reactive sputter deposition; silicon substrate; Performance evaluation; Piezoelectric films; Plasma temperature; Radio frequency; Semiconductor films; Silicon; Sputtering; Strain measurement; Substrates; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2000 IEEE

Conference_Location

San Juan

ISSN

1051-0117

Print_ISBN

0-7803-6365-5

Type

conf

DOI

10.1109/ULTSYM.2000.922569

Filename

922569