• DocumentCode
    1745400
  • Title

    Fabrication of high frequency SAW filters from 5 to 10 GHz using SiO2/ZnO/diamond structure

  • Author

    Nakahata, H. ; Hachigo, A. ; Itakura, K. ; Shikata, S.

  • Author_Institution
    Diamond SAW Device Project Group, Sumitomo Electr. Ind. Ltd., Itami, Japan
  • Volume
    1
  • fYear
    2000
  • fDate
    36800
  • Firstpage
    349
  • Abstract
    Two kinds of narrow band SAW filters were fabricated with the SiO 2/ZnO/diamond structure. The center frequency of 5 GHz with the minimum insertion loss of 13 dB and the Q value of 650 was obtained with the electrodes of 0.5 μm width. The center frequency of 10 GHz with the minimum insertion loss of 22 dB and the Q value of 730 was obtained with the electrodes of 0.65 μm width using the harmonic wave. Both of these filters showed smaller frequency shift on temperature than that of ST-cut quartz
  • Keywords
    Q-factor; acoustic microwave devices; diamond; microwave filters; silicon compounds; surface acoustic wave filters; zinc compounds; 13 to 22 dB; 5 to 10 GHz; Q-factor; SiO2-ZnO-C; SiO2/ZnO/diamond structure; fabrication; harmonic wave; high-frequency narrow-band SAW filter; insertion loss; Electrodes; Fabrication; Insertion loss; Narrowband; Optical films; Radio frequency; SAW filters; Surface acoustic waves; Temperature; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2000 IEEE
  • Conference_Location
    San Juan
  • ISSN
    1051-0117
  • Print_ISBN
    0-7803-6365-5
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2000.922570
  • Filename
    922570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1745400