Title :
Fabrication of high frequency SAW filters from 5 to 10 GHz using SiO2/ZnO/diamond structure
Author :
Nakahata, H. ; Hachigo, A. ; Itakura, K. ; Shikata, S.
Author_Institution :
Diamond SAW Device Project Group, Sumitomo Electr. Ind. Ltd., Itami, Japan
Abstract :
Two kinds of narrow band SAW filters were fabricated with the SiO 2/ZnO/diamond structure. The center frequency of 5 GHz with the minimum insertion loss of 13 dB and the Q value of 650 was obtained with the electrodes of 0.5 μm width. The center frequency of 10 GHz with the minimum insertion loss of 22 dB and the Q value of 730 was obtained with the electrodes of 0.65 μm width using the harmonic wave. Both of these filters showed smaller frequency shift on temperature than that of ST-cut quartz
Keywords :
Q-factor; acoustic microwave devices; diamond; microwave filters; silicon compounds; surface acoustic wave filters; zinc compounds; 13 to 22 dB; 5 to 10 GHz; Q-factor; SiO2-ZnO-C; SiO2/ZnO/diamond structure; fabrication; harmonic wave; high-frequency narrow-band SAW filter; insertion loss; Electrodes; Fabrication; Insertion loss; Narrowband; Optical films; Radio frequency; SAW filters; Surface acoustic waves; Temperature; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 2000 IEEE
Conference_Location :
San Juan
Print_ISBN :
0-7803-6365-5
DOI :
10.1109/ULTSYM.2000.922570
