DocumentCode :
1745401
Title :
Effect of dielectric layer in ZnO/dielectric/Si layered structure on GSAW and HVPSAW propagation properties
Author :
Choi, K.H. ; Kim, Jin Yong ; Kim, Hyeong Joon ; Yang, Hyung Kook ; Park, Jong Chul
Author_Institution :
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
Volume :
1
fYear :
2000
fDate :
36800
Firstpage :
353
Abstract :
The propagation characteristics of the GSAW and HVPSAW modes in ZnO/dielectric/Si layered structures were examined theoretically and experimentally. The dielectric layer effects on SAW propagation properties were examined by using SiO2, Si3N4 , and TiO2 thin film layer. In case of ZnO/SiO2 /Si structure, both GSAW and HVPSAW modes were observed experimentally. The HVPSAW mode velocity at kHZnO=1.1 and kH(SiO2)=0.02 was found at the value of 9,180 m/s. On the contrary, in ZnO/Si3N4/Si and ZnO/TiO2/Si structures only GSAW modes were found
Keywords :
dielectric thin films; piezoelectric thin films; silicon; surface acoustic waves; zinc compounds; GSAW propagation; HVPSAW propagation; ZnO-Si3N4-Si; ZnO-SiO2-Si; ZnO-TiO2-Si; ZnO/dielectric/Si layered structure; dielectric thin film; Dielectric substrates; Dielectric thin films; Frequency; Propagation losses; Semiconductor films; Semiconductor thin films; Sputtering; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2000 IEEE
Conference_Location :
San Juan
ISSN :
1051-0117
Print_ISBN :
0-7803-6365-5
Type :
conf
DOI :
10.1109/ULTSYM.2000.922571
Filename :
922571
Link To Document :
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