Effect of dielectric layer in ZnO/dielectric/Si layered structure on GSAW and HVPSAW propagation properties

Author

Choi, K.H. ; Kim, Jin Yong ; Kim, Hyeong Joon ; Yang, Hyung Kook ; Park, Jong Chul

Author_Institution

Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea

Volume

1

fYear

2000

fDate

36800

Firstpage

353

Abstract

The propagation characteristics of the GSAW and HVPSAW modes in ZnO/dielectric/Si layered structures were examined theoretically and experimentally. The dielectric layer effects on SAW propagation properties were examined by using SiO₂, Si₃N₄, and TiO₂ thin film layer. In case of ZnO/SiO₂/Si structure, both GSAW and HVPSAW modes were observed experimentally. The HVPSAW mode velocity at kH_ZnO=1.1 and kH(SiO₂)=0.02 was found at the value of 9,180 m/s. On the contrary, in ZnO/Si₃N₄/Si and ZnO/TiO₂/Si structures only GSAW modes were found

Keywords

dielectric thin films; piezoelectric thin films; silicon; surface acoustic waves; zinc compounds; GSAW propagation; HVPSAW propagation; ZnO-Si₃N₄-Si; ZnO-SiO₂-Si; ZnO-TiO₂-Si; ZnO/dielectric/Si layered structure; dielectric thin film; Dielectric substrates; Dielectric thin films; Frequency; Propagation losses; Semiconductor films; Semiconductor thin films; Sputtering; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2000 IEEE

Conference_Location

San Juan

ISSN

1051-0117

Print_ISBN

0-7803-6365-5

Type

conf

DOI

10.1109/ULTSYM.2000.922571

Filename

922571