Title :
Acoustic phonons in a piezoelectric (111) GaAs/AlAs superlattice
Author :
Zhang, Victor Y. ; Lefebvre, J.E. ; Gryba, T.
Author_Institution :
IEMN-DOAE, CNRS, Villeneuve d´´Ascq, France
Abstract :
Dispersion, transmission (T), and reflection (R) properties of acoustic phonons in a (111) GaAs/AlAs superlattice are numerically investigated. Both classical dispersion curves and Floquet slowness diagrams are given to show the edges of the Brillouin zones. Locations and widths of the stop bands inside the folded zones, as well as T- and R-rates, are studied as a function of frequency and incident angle. General expressions for T- and R-rates are derived, including mode conversion. Due to interaction between modes, T and R rates exceed unity for certain frequencies
Keywords :
Brillouin zones; III-V semiconductors; aluminium compounds; gallium arsenide; phonon dispersion relations; piezoelectric semiconductors; semiconductor superlattices; Brillouin zones; Floquet slowness diagrams; GaAs-AlAs; acoustic phonons; classical dispersion curves; folded zones; incident angle; mode conversion; piezoelectric superlattice; stop bands; Acoustic reflection; Couplings; Dispersion; Filtering; Frequency; Gallium arsenide; Genetic expression; Phonons; Polarization; Superlattices;
Conference_Titel :
Ultrasonics Symposium, 2000 IEEE
Conference_Location :
San Juan
Print_ISBN :
0-7803-6365-5
DOI :
10.1109/ULTSYM.2000.922611
