Acoustic phonons in a piezoelectric (111) GaAs/AlAs superlattice

Author

Zhang, Victor Y. ; Lefebvre, J.E. ; Gryba, T.

Author_Institution

IEMN-DOAE, CNRS, Villeneuve d´´Ascq, France

Volume

1

fYear

2000

fDate

36800

Firstpage

561

Abstract

Dispersion, transmission (T), and reflection (R) properties of acoustic phonons in a (111) GaAs/AlAs superlattice are numerically investigated. Both classical dispersion curves and Floquet slowness diagrams are given to show the edges of the Brillouin zones. Locations and widths of the stop bands inside the folded zones, as well as T- and R-rates, are studied as a function of frequency and incident angle. General expressions for T- and R-rates are derived, including mode conversion. Due to interaction between modes, T and R rates exceed unity for certain frequencies

Keywords

Brillouin zones; III-V semiconductors; aluminium compounds; gallium arsenide; phonon dispersion relations; piezoelectric semiconductors; semiconductor superlattices; Brillouin zones; Floquet slowness diagrams; GaAs-AlAs; acoustic phonons; classical dispersion curves; folded zones; incident angle; mode conversion; piezoelectric superlattice; stop bands; Acoustic reflection; Couplings; Dispersion; Filtering; Frequency; Gallium arsenide; Genetic expression; Phonons; Polarization; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2000 IEEE

Conference_Location

San Juan

ISSN

1051-0117

Print_ISBN

0-7803-6365-5

Type

conf

DOI

10.1109/ULTSYM.2000.922611

Filename

922611