Title :
A new class of capacitive micromachined ultrasonic transducers
Author :
Ahrens, O. ; Hohlfeld, D. ; Buhrdorf, A. ; Glitza, O. ; Binder, J.
Author_Institution :
Inst. for Microsensors, -Actuators, & -Syst., Bremen Univ., Germany
Abstract :
A new set-up of capacitive micromachined ultrasonic transducers (cMUT) will be described that recently have been successfully realized. This new transducer design utilizes a structured silicon oxide sacrificial layer as well as a highly doped and, therefore, conductive membrane of polycrystalline silicon. So far, cMUT have been produced with resonance frequencies in the range from 1 to 4 MHz. These devices have been applied to a displacement measurement in air
Keywords :
displacement measurement; micromachining; ultrasonic transducers; Si; SiO2; capacitive micromachined ultrasonic transducers; conductive membrane; displacement measurement; polycrystalline silicon; resonance frequencies; structured silicon oxide sacrificial layer; transducer design; Biomembranes; Displacement measurement; Electrostatic actuators; Fabrication; Piezoelectric transducers; Resonance; Resonant frequency; Sensor arrays; Silicon; Ultrasonic transducers;
Conference_Titel :
Ultrasonics Symposium, 2000 IEEE
Conference_Location :
San Juan
Print_ISBN :
0-7803-6365-5
DOI :
10.1109/ULTSYM.2000.922695
