Title :
RTP for shallow junction formation-monitoring with repeatable, reliable sheet resistance measurements
Author :
Aderhold, Wolfgang ; Jain, Amitabh ; Foad, Majeed ; Mayur, Abhilash
Author_Institution :
Thermal Process & Gate Div., Appl. Mater Inc., Santa Clara, CA, USA
Abstract :
RTP spike anneals are evaluated for various conditions of very low energy B implants. The effects of preamorphisation implant (PAI) and screen oxide on sheet resistance (Rs) are discussed. The implant profiles are analyzed using spreading resistance profiling (SRP), SIMS and 4-point probe measurements. By variation of the junction depth it is shown that the 4-point probes can affect the very shallow p-n junction leading to leakage current that results in erroneously low Rs values. A simple solution for a good process monitor is given. The solution prevents the above measurement artifact, and at the same time is least sensitive to factors other than RTP and implant
Keywords :
boron; electrical resistivity; elemental semiconductors; ion implantation; leakage currents; rapid thermal annealing; secondary ion mass spectra; semiconductor doping; semiconductor junctions; silicon; 4-point probe measurements; RTP spike anneals; SIMS; Si:B; implant profiles; junction depth; leakage current; low energy B implants; preamorphisation implant; shallow junction formation; shallow p-n junction; sheet resistance; spreading resistance profiling; Annealing; Conductivity; Electrical resistance measurement; Implants; Instruments; Monitoring; P-n junctions; Probes; Sheet materials; Thermal resistance;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924124
