Title :
Towards a comprehensive model of electronic stopping in amorphous and crystalline silicon
Author :
Hobler, G. ; Murthy, C.S.
Author_Institution :
Inst. fur Festkorperphys., Wien Univ., Austria
Abstract :
Published experimental data on ion transmission and range profiles in silicon are used to calibrate a hybrid model of local and nonlocal electronic stopping. The resulting comprehensive model is applicable to both the random and the channeling case in a wide energy range for ions with atomic numbers 3⩽Z1⩽33. The random stopping power is compared to the ZBL electronic stopping power. Limitations are briefly discussed
Keywords :
amorphous semiconductors; elemental semiconductors; energy loss of particles; silicon; Si; channeling; comprehensive model; electronic stopping; hybrid model; ion transmission; local electronic stopping; nonlocal electronic stopping; random stopping power; range profiles; Aerospace electronics; Amorphous materials; Crystalline materials; Crystallization; Energy loss; History; Hybrid junctions; Nuclear electronics; Research and development; Silicon;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924126
