High energy, high current performance of the GSD/VHE implanter for the production of high dose p-type buried layers

Over the last several years, the use of the high energy ion implantation has become a mainstream process for the formation of retrograde twin and triple wells for CMOS integrated circuits. New applications using high energy implantation to form high dose p-type buried layers for epi-replacement and device enhancement are being investigated by major IC manufacturers worldwide. Specialized ion implantation equipment must be used to form such high energy, high dose implants with energies for boron ranging from 1.3-1.6 MeV and doses as high as 2×10¹⁵ at/cm². This paper describes the performance of the GSD/VHE ion implanter for the production of high energy, high dose buried layers. We describe the results of a production simulation test in which the GSD/VHE was run at 1.5 MeV B⁺ with beam current above 1.0 mA for a buried layer type process. Source life of over 200 hours, non-uniformity and wafer to wafer repeatability of <0.5% 1σ with an uptime on 98% were the results of the test