Formation of textured TiN-layers on Si by metal plasma immersion ion implantation and deposition

In this report the formation of textured and dense TiN films on Si by MePIID at room temperature is investigated. The high voltage pulses with duty cycles of 9% were varied between 0 and 10 kV. The growth rates of a few nanometers per second, depending on the arc current, were calculated using results from elastic recoil detection analysis (ERDA). Using resonant Rutherford backscattering spectroscopy (RRBS), contamination levels of less than 0.5% oxygen were determined. With X-ray diffraction (XRD) and pole figure measurements a highly oriented TiN phase was observed for all bias voltages. The (200) axis is normal to the surface, whereas the (111) axes of the crystallites are randomly oriented. No amorphisation or tilt of this fibre texture was observed with increasing pulse bias. The homogeneity over 4" is better than 2%. The resistivity of the layers is between 300 and 70 μΩcm, depending on the deposition conditions