DocumentCode :
1745599
Title :
Two implant measurement of pressure compensation factors
Author :
Halling, Mike
Author_Institution :
Axcelis Technol. Inc., Beverly, MA, USA
fYear :
2000
fDate :
2000
Firstpage :
585
Lastpage :
587
Abstract :
The ion beam is neutralized by interactions with the gas molecules present in the process chamber during wafer implant, and thus pressure compensation of this neutralization is necessary to deliver the proper dose. The parameters necessary for pressure compensation have traditionally been determined by implanting a matrix of monitor wafers with various recipe parameters. This paper describes a new method for accurately determining these factors with fewer implants. The new method is faster, much less expensive and is more immune to systematic errors in the implanter and post processing. This procedure has been used to generate tables of pressure compensation factors for several Axcelis high current platforms, and offers improvements to SPC collection at customer sites
Keywords :
calibration; compensation; ion implantation; semiconductor doping; Axcelis high current platforms; K-factors; ion beam; monitor wafers; neutralization; post processing; pressure compensation factors; process chamber; wafer implant; Condition monitoring; Control systems; Current measurement; Dosimetry; Electric variables measurement; Equations; Implants; Ion beams; Pressure measurement; Xenon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
Type :
conf
DOI :
10.1109/.2000.924220
Filename :
924220
Link To Document :
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