Title :
Control of channeling uniformity for advanced applications
Author :
Olson, J.C. ; Renau, A.
Author_Institution :
Varian Semicond. Equipment Associates, Gloucester, MA, USA
Abstract :
A highly parallel ion beam and tight beam-wafer incidence angle control are required for uniform device performance when the device manufacturing process relies on channeling to achieve the desired dopant depth profile. An example of a device technology that relies on channeling is described, along with the benefits associated with the channeled dopant depth profile. The techniques used on the VIISta 810 in order to deliver the required parallelism and angle control are discussed. Thermawave thermaprobe and SIMS results are presented and show the effectiveness of these techniques
Keywords :
beam handling techniques; channelling; doping profiles; elemental semiconductors; ion implantation; phosphorus; secondary ion mass spectra; silicon; SIMS results; Si:P; VIISta 810; beam-wafer incidence angle control; channeled dopant depth profile; channeling uniformity control; highly parallel ion beam; parallelism; thermawave thermaprobe; Collimators; Design optimization; Electrostatic measurements; Implants; Ion beams; Lattices; Manufacturing processes; Monitoring; Pulp manufacturing; Silicon;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924242
