Microstructure and optical effects of buried nano-cavities formed in silicon by hydrogen ion implantation

Author

Li, L. ; Yu, Y.H. ; Lin, Z.X. ; Wang, X. ; Mandel, S. ; Sundarvel, B. ; Luo, E.Z. ; Wilson, I.H.

Author_Institution

Shanghai Inst. of Metall., China

fYear

2000

fDate

2000

Firstpage

769

Lastpage

772

Abstract

The formation of nano-cavities in silicon, induced by hydrogen implantation, has been studied by Rutherford Back-Scattering Channeling (RBS/C), Atomic Force Microscope (AFM) and infrared reflection spectra (IR). The Specimens, implanted with 160 keV hydrogen ions to a dose of 8.2×10¹⁶ cm^-1, are annealed at 400°C for times of 30 minutes. The result of RBS shows that the surface damage due to implantator is little after annealing. AFM validates the swelling caused by the implantation of Hydrogen. By detailed theoretical analysis and computer simulation of IR reflection interference spectra with the model described in the text, the depth distribution of the cavities concentration was obtained

Keywords

crystal microstructure; elemental semiconductors; hydrogen; infrared spectra; ion implantation; nanostructured materials; semiconductor doping; silicon; voids (solid); 160 keV; 30 min; 400 C; AFM; IR reflection interference spectra; Rutherford Back-Scattering Channeling; Si:H; annealed; buried nano-cavities; cavities concentration; hydrogen implantation; infrared reflection spectra; microstructure; optical effects; surface damage; swelling; Annealing; Atom optics; Atomic force microscopy; Computer simulation; Hydrogen; Infrared spectra; Microstructure; Optical reflection; Particle beam optics; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924267

Filename

924267