Title :
Microstructure and optical effects of buried nano-cavities formed in silicon by hydrogen ion implantation
Author :
Li, L. ; Yu, Y.H. ; Lin, Z.X. ; Wang, X. ; Mandel, S. ; Sundarvel, B. ; Luo, E.Z. ; Wilson, I.H.
Author_Institution :
Shanghai Inst. of Metall., China
Abstract :
The formation of nano-cavities in silicon, induced by hydrogen implantation, has been studied by Rutherford Back-Scattering Channeling (RBS/C), Atomic Force Microscope (AFM) and infrared reflection spectra (IR). The Specimens, implanted with 160 keV hydrogen ions to a dose of 8.2×1016 cm-1, are annealed at 400°C for times of 30 minutes. The result of RBS shows that the surface damage due to implantator is little after annealing. AFM validates the swelling caused by the implantation of Hydrogen. By detailed theoretical analysis and computer simulation of IR reflection interference spectra with the model described in the text, the depth distribution of the cavities concentration was obtained
Keywords :
crystal microstructure; elemental semiconductors; hydrogen; infrared spectra; ion implantation; nanostructured materials; semiconductor doping; silicon; voids (solid); 160 keV; 30 min; 400 C; AFM; IR reflection interference spectra; Rutherford Back-Scattering Channeling; Si:H; annealed; buried nano-cavities; cavities concentration; hydrogen implantation; infrared reflection spectra; microstructure; optical effects; surface damage; swelling; Annealing; Atom optics; Atomic force microscopy; Computer simulation; Hydrogen; Infrared spectra; Microstructure; Optical reflection; Particle beam optics; Silicon;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924267
